? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? fax (631) 242-9798 ? ? world wide web - http://www.sensitron.com ? e-mail - sales@sensitron.com ? sensitron semiconductor technical data datasheet 4765, rev. b hermetic schottky rectifier very low forward voltage drop features: ? soft reverse recovery at low and high temperature ? very low forward voltage drop ? low power loss, high efficiency ? high surge capacity ? guard ring for enhanced durability and long term reliability ? guaranteed reverse avalanche characteristics maximum ratings characteristics symbol condition max. units peak inverse voltage v rwm - 60 v max. average forward current i f(av) 50% duty cycle, rectangular wave form (single) 60 a max. average forward current i f(av) 50% duty cycle, rectangular wave form (common cathode) 120 a max. peak one cycle non- repetitive surge current i fsm 8.3 ms, half sine wave (per leg) 860 a non-repetitive avalanche energy e as t j = 25 c, i as = 3.0 a, l = 4.4 mh (per leg) 20 mj repetitive avalanche current i ar i as decay linearly to 0 in 1 s ? limited by t j max v a =1.5v r 3.0 a maximum thermal resistance r jc dc operation 0.18 c/w max. junction temperature t j - -65 to +150 c max. storage temperature t stg - -65 to +150 c electrical characteristics characteristics symbol condition max. units max. forward voltage drop v f1 @ 60a, pulse, t j = 25 c 0.70 v (per leg) v f2 @ 60a, pulse, t j = 125 c 0.67 v max. reverse current i r1 @v r = 60v, pulse, t j = 25 c 6 ma (per leg) i r2 @v r = 60v, pulse, t j = 125 c 420 ma max. junction capacitance (per leg) c t @v r = 5v, t c = 25 c f sig = 1mhz, v sig = 50mv (p-p) 2400 pf shd118513 shd118513a shd118513b
? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? fax (631) 242-9798 ? ? world wide web - http://www.sensitron.com ? e-mail - sales@sensitron.com ? sensitron semiconductor technical data datasheet 4765, rev. b mechanical dimensions : in inches / mm 1 2 3 pinout table device type pin 1 pin 2 pin 3 dual rectifier, common cathode (p) common cathode anode anode note: the v f curves shown are for the sd200sa60 unpackaged die only. 0.0 0.2 0.4 0.6 0.8 forward voltage drop - v f (v) 10 -1 10 0 10 1 10 2 instantaneous forward current - i f (a) typical forward characteristics 125 c 25 c 0 102030405060 reverse voltage - v r (v) 10 -2 10 -1 10 0 10 1 10 2 10 3 instantaneous reverse current - i r (ma) typical reverse characteristics 25 c 50 c 75 c 100 c 125 c 0 102030405060 reverse voltage - v r (v) 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 junction capacitance - c t (pf) typical junction capacitance shd118513 shd118513a shd118513b 2 3 .370.010 (9.40.254) .610.010 (15.5.254) .125.010 (3.17.254) .110 (2.79) max alumina ring .510.020 (12.9.508) .320.010 (8.13.254) .030.010 (.762.254) moly lid moly base term inal 1 .060.010 (1.52.254) .020.002 (.508.051) .020.005 r (.508.127 ) 2 3 .370.010 (9.40.254) .610.010 (15.5.254) .090.010 (2.29.254) .130 (3.30) max alumina ring .520.020 (13.2.508) .320.010 (8.13 .254) .030.010 (.762.254) moly lid moly base terminal 1 .060.010 ( 1.52.254 ) .015.002 (.381.051) .020.005 r (.508.127 ) copper terminals .370.010 ( 9.40.254 ) 2 3 .610.010 ( 15.5.254 ) .030.010 ( .762.254 ) .110 ( 2.80 ) max a lumina rin g terminal 1 s hd- 5 b shd-5a
? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? fax (631) 242-9798 ? ? world wide web - http://www.sensitron.com ? e-mail - sales@sensitron.com ? sensitron semiconductor technical data datasheet 4765, rev. b shd118513 shd118513a shd118513b disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change without prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety s hould be ensured by using semi conductor devices that featur e assured safety or by m eans of users? fail-safe precautions or other arrangement . 3- in no event shall sensitron semiconductor be liable for any dam ages that may result from an accident or any other cause duri ng operation of the user?s units according to the datas heet(s). sensitron semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of info rmation, products or circuits described in the datasheets. 4- in no event shall sensitron semiconductor be liable for any fa ilure in a semiconductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s ) under any patents or other rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any form, in whole or par t, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be ap plied to that purpose by their direct purchasers or any thir d party. when exporting these products (technolog ies), the necessary procedures are to be taken in accordance with related laws and regulatio ns.
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